Toshiba Releases 3rd Generation 650V SiC Schottky Barrier Diodes
Toshiba
Electronic Devices & Storage Corporation (“Toshiba”) has launched the
"TRSxxx65H series,” the company’s third and latest generation
of silicon carbide (SiC) Schottky barrier diodes (SBDs) for industrial
equipment. Volume shipments of the first 12 products, all 650V, start today,
with seven products housed in TO-220-2L packages and five in DFN8×8 packages.
The new products use a new metal in a third generation SiC SBD
chip that optimizes the junction barrier Schottky (JBS) structure of the
second generation products. They achieve industry-leading low
forward voltage of 1.2V (Typ.), 17% lower than the 1.45V (Typ.) of the previous
generation. They also improve the trade-offs between forward voltage and total
capacitive charge, and between forward voltage and reverse current, which
reduces power dissipation and contributes to high efficiency of equipment.
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