Kioxia Announces High-Capacity KIOXIA LC9 Series 122.88 TB NVMe SSD for AI Applications
Kioxia Corporation,
a world leader in memory solutions, announced the development of its new KIOXIA
LC9 Series 122.88 terabyte (TB) NVMe SSD in a 2.5-inch form factor – the first
SSD built with the company’s BiCS FLASH generation 8 3D flash memory technology
2 terabit (Tb) QLC die. The KIOXIA LC9 Series, which is under development, will
be showcased at various upcoming conferences from this month.
As AI systems
become increasingly sophisticated and data volumes continue to grow,
enterprises require storage solutions that can keep pace with the complex
demands of modern workloads. High-capacity drives are critical for certain
phases of the AI process, including large language models (LLMs), training and
storing vast datasets, vector databases and the rapid retrieval of information
for inference and fine-tuning. Designed for generative AI applications, the new
enterprise-class KIOXIA drive is built for high capacity and provides a PCIe®
5.0 interface with dual-port capability for fault tolerance or connectivity to
multiple compute systems. These high-capacity QLC-based SSDs are suitable for
deploying in hybrid cloud and multi-cloud systems. High-capacity SSDs feed
training and inference data to AI server systems via these cloud
configurations.
This new KIOXIA SSD
complements the recently announced KIOXIA AiSAQ™ technology, which enhances
scalable RAG (Retrieval Augmented Generation) performance by storing vector
database elements on SSDs instead of costly, limited DRAM. Additionally, it
improves system and rack-level efficiency with higher storage density and lower
power consumption per TB compared to lower-capacity SSDs.
KIOXIA LC9 Series SSD highlights include:
Dual-port 2.5-inch
SSD form factor, 122.88 TB capacity, 0.3 DWPD endurance.
NVMe™ 2.0, NVMe-MI™
and PCIe® 5.0 specification-compliant (up to 128 gigatransfers per second Gen5
single x4, dual x2 performance capable).
Features KIOXIA 2
Tb QLC BiCS FLASH™ generation 8 3D flash memory with CBA (CMOS directly Bonded
to Array) technology, which contributes to making high capacity, high
performance and power efficient products.
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