Transphorm’s GaN Powers World’s First Integrated Microinverter PV Systems
Transphorm, a global leader in robust
GaN power semiconductors, the future of next generation power systems, announced that its GaN platform powers the
world’s first integrated photovoltaic (PV) systems from DAH Solar Co., Ltd.
(Anhui Daheng New Energy Technology Co., LTD/subsidiary of DAH Solar). The PV
systems are used in DAH Solar’s new SolarUnit
product line. DAH Solar credits Transphorm’s GaN FETs with enabling
it to produce smaller, lighter, and more reliable solar panel systems that also
offer higher overall power generation with lower energy consumption. The design
achievements continue to demonstrate Transphorm’s One
Core GaN Platform, Crossing the Power Spectrum leadership position by
solidifying its value proposition in the renewables market, which currently
represent a GaN TAM of more than $500M.
DAH Solar uses
Transphorm’s 150 mΩ and 70 mΩ GaN FETs in the SolarUnits’ design architecture
(both DC-to-DC and DC-to-AC power stages). The SolarUnits are available in
three models with power outputs of 800 W, 920 W, or 1500 W and peak
efficiencies of 97.16%, 97.2%, and 97.55% respectively. The GaN devices deliver
higher switching frequencies and power density versus incumbent silicon
solutions. Notably, the two FETs are available in PQFN88 performance packages
that pair with commonly-used gate drivers—features that helped DAH Solar
quicken its design time.
“We have
a strong legacy of producing innovative PV products. As such, we consistently
look for ways to advance our products with state-of-the-art technologies to
create a better, more efficient end user experience,” said Yong Gu, GM, DAH
Solar. “We view Transphorm as an authority in the field of GaN production and
found their advanced GaN FETs to be the optimal devices for our new SolarUnit
line. The devices are easy to design in and offer performance advantages that
enable us to continue building on our legacy.”
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